Electron-beam patterning of polymer electrolyte films to make multiple nanoscale gates for nanowire transistors

Abstract

We report an electron-beam based method for the nanoscale patterning of the poly(ethylene oxide)/LiClO${}_4$ polymer electrolyte. We use the patterned polymer electrolyte as a high capacitance gate dielectric in single nanowire transistors and obtain subthreshold swings comparable to conventional metal/oxide wrap-gated nanowire transistors. Patterning eliminates gate/contact overlap which reduces parasitic effects and enables multiple, independently controllable gates. The method's simplicity broadens the scope for using polymer electrolyte gating in studies of nanowires and other nanoscale devices.

arXiv comment20 pages, 4 figures. Supplementary information available at Nano Letters or by contact with APM

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Cited by in corpus (8)

• Perspective: Organic electronic materials and devices for neuromorphic engineering
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• Using polymer electrolyte gates to set-and-freeze threshold voltage and local potential in nanowire-based devices and thermoelectrics
• Dispersive 1D Majorana modes with emergent supersymmetry in 1D proximitized superconductors via spatially-modulated potentials and magnetic fields
• Near-thermal limit gating in heavily-doped III-V semiconductor nanowires using polymer electrolytes
• The effect of direct electron beam patterning on the water uptake and ionic conductivity of Nafion thin films