79 citations · 150 across the 3 of their papers we have counts for
3 papers
cond-mat.mes-hall2015★ 40 cited
InAs nanowire transistors with multiple, independent wrap-gate segments
A. M. Burke, D. J. Carrad, J. G. Gluschke +5
We report a method for making horizontal wrap-gate nanowire transistors with up to four independently controllable wrap-gated segments. While the step up to two independent wrap-ga…
cond-mat.mes-hall2014★ 31 cited
Electron-beam patterning of polymer electrolyte films to make multiple nanoscale gates for nanowire transistors
D. J. Carrad, A. M. Burke, R. W. Lyttleton +7
We report an electron-beam based method for the nanoscale patterning of the poly(ethylene oxide)/LiClO polymer electrolyte. We use the patterned polymer electrolyte as a high…
cond-mat.mes-hall2012★ 79 cited
Realizing lateral wrap-gated nanowire FETs: Controlling gate length with chemistry rather than lithography
Kristian Storm, Gustav Nylund, Lars Samuelson +1
An important consideration in miniaturizing transistors is maximizing the coupling between the gate and the semiconductor channel. A nanowire with a coaxial metal gate provides opt…