31 citations · 126 across the 8 of their papers we have counts for
8 papers
Integrated bioelectronic proton-gated logic elements utilizing nanoscale patterned Nafion
J. G. Gluschke, J. Seidl, R. W. Lyttleton +9
A central endeavour in bioelectronics is the development of logic elements to transduce and process ionic to electronic signals. Motivated by this challenge, we report fully monoli…
Solving the 3-SAT problem using network-based biocomputation
Jingyuan Zhu, Aseem Salhotra, Christoph Robert Meinecke +8
The 3-Satisfiability Problem (3-SAT) is a demanding combinatorial problem, of central importance among the non-deterministic polynomial (NP) complete problems, with applications in…
The Lawnmower: an autonomous, protein-based artificial molecular motor
Chapin S. Korosec, Ivan Unksov, Pradheebha Surendiran +6
Inspired by biology, great progress has been made in creating artificial molecular motors. However, the dream of harnessing proteins - the building blocks selected by Nature - to d…
Achieving short high-quality gate-all-around structures for horizontal nanowire field-effect transistors
J. G. Gluschke, J. Seidl, A. M. Burke +7
We introduce a fabrication method for gate-all-around nanowire field-effect transistors. Single nanowires were aligned perpendicular to underlying bottom gates using a resist-trenc…
Using ultra-thin parylene films as an organic gate insulator in nanowire field-effect transistors
J. G. Gluschke, J. Seidl, R. W. Lyttleton +5
We report the development of nanowire field-effect transistors featuring an ultra-thin parylene film as a polymer gate insulator. The room temperature, gas-phase deposition of pary…
Electron-beam patterning of polymer electrolyte films to make multiple nanoscale gates for nanowire transistors
D. J. Carrad, A. M. Burke, R. W. Lyttleton +7
We report an electron-beam based method for the nanoscale patterning of the poly(ethylene oxide)/LiClO polymer electrolyte. We use the patterned polymer electrolyte as a high…
The effect of (NH4)2Sx passivation on the (311)A GaAs surface and its use in AlGaAs/GaAs heterostructure devices
D. J. Carrad, A. M. Burke, P. J. Reece +6
We have studied the efficacy of (NH4)2Sx surface passivation on the (311)A GaAs surface. We report XPS studies of simultaneously-grown (311)A and (100) heterostructures showing tha…
The origin of gate hysteresis in p-type Si-doped AlGaAs/GaAs heterostructures
A. M. Burke, D. Waddington, D. Carrad +9
Gate instability/hysteresis in modulation-doped p-type AlGaAs/GaAs heterostructures impedes the development of nanoscale hole devices, which are of interest for topics from quantum…