activity
20122023
most citedElectron-beam patterning of polymer electrolyte films to make multiple nanoscale gates for nanowire transistors

31 citations · 126 across the 8 of their papers we have counts for

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Showing 2018Show all

2 papers · 1 filter

physics.app-ph2018★ 19 cited

Achieving short high-quality gate-all-around structures for horizontal nanowire field-effect transistors

J. G. Gluschke, J. Seidl, A. M. Burke +7

We introduce a fabrication method for gate-all-around nanowire field-effect transistors. Single nanowires were aligned perpendicular to underlying bottom gates using a resist-trenc…

physics.app-ph2018★ 13 cited

Using ultra-thin parylene films as an organic gate insulator in nanowire field-effect transistors

J. G. Gluschke, J. Seidl, R. W. Lyttleton +5

We report the development of nanowire field-effect transistors featuring an ultra-thin parylene film as a polymer gate insulator. The room temperature, gas-phase deposition of pary…