Observation of degenerate one-dimensional sub-bands in cylindrical InAs nanowires

Abstract

One-dimensional (1D) sub-bands in cylindrical InAs nanowires (NWs) are electrically mapped as a function of NW diameter in the range of 15-35 nm. At low temperatures, stepwise current increases with the gate voltage are clearly observed and attributed to the electron transport through individual 1D sub-bands. The two-fold degeneracy in certain sub-band energies predicted by simulation due to structural symmetry is experimentally observed for the first time. The experimentally obtained sub-band energies match the simulated results, shedding light on both the energies of the sub-bands as well as the number of sub-bands populated per given gate voltage and diameter. This work serves to provide better insight into the electrical transport behavior of 1D semiconductors.

20 pages, 5 figures, supporting information included

References in corpus (6)

• One-Dimensional Hole Gas in Germanium/Silicon Nanowire Heterostructures
• Ultrathin compound semiconductor on insulator layers for high performance nanoscale transistors
• Single quantum dot nanowire LEDs
• Diameter-Dependent Electron Mobility of InAs Nanowires
• One-dimensional Weak Localization of Electrons in a Single InAs Nanowire
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Cited by in corpus (16)

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• Conductance Quantization at zero magnetic field in InSb nanowires
• Numerical study of PbTe-Pb hybrid nanowires for engineering Majorana zero modes
• Split-Channel Ballistic Transport in an InSb Nanowire
• Electron-beam patterning of polymer electrolyte films to make multiple nanoscale gates for nanowire transistors
• Hybrid Superconductor-Quantum Point Contact Devices using InSb Nanowires
• Electron-hole interactions in coupled InAs-GaSb quantum dots based on nanowire crystal phase templates
• Magneto-transport Subbands Spectroscopy in InAs Nanowires
• Magnetoconductance signatures of subband structure in semiconductor nanowires
• Hot Electrons Regain Coherence in Semiconducting Nanowires
• Gate-tunable subband degeneracy in semiconductor nanowires
• Bi2O2Se nanowires presenting high mobility and strong spin-orbit coupling
• Nonadiabatic braiding of Majorana modes