activity
20032022
most citedAtomically thin p-n junctions with van der Waals heterointerfaces

2.3k citations · 8.7k across the 42 of their papers we have counts for

collaborators

42 papers

cond-mat.mes-hall2022★ 14 cited

Multiscale Modeling of Semimetal Contact to Two-Dimensional Transition Metal Dichalcogenide Semiconductor

Tong Wu, Jing Guo

A multiscale simulation approach is developed to simulate the contact transport properties between semimetal to a monolayer two-dimensional (2D) transition metal dichalcogenide (TM…

quant-ph2020★ 6 cited

Variability and Fidelity Limits of Silicon Quantum Gates Due to Random Interface Charge Traps

Tong Wu, Jing Guo

Silicon offers an attractive material platform for hardware realization of quantum computing. In this study, a microscopic stochastic simulation method is developed to model the ef…

cs.ET2019

Machine Learning Approach for Device-Circuit Co-Optimization of Stochastic-Memristive-Device-Based Boltzmann Machine

Tong Wu, Huan Zhao, Fanxin Liu +2

A Boltzmann machine whose effective "temperature" can be dynamically "cooled" provides a stochastic neural network realization of simulated annealing, which is an important metaheu…

cond-mat.mes-hall2019★ 3 cited

Computational Assessment of Silicon Quantum Gate Based on Detuning Mechanism for Quantum Computing

Tong Wu, Jing Guo

Silicon-based quantum computing has the potential advantages of low cost, high integration density, and compatibility with CMOS technologies. The detuning mechanism has been used t…

cond-mat.mes-hall2018★ 2 cited

Performance Assessment of Resonantly Driven Silicon Two-Qubit Quantum Gate

Tong Wu, Jing Guo

Two-qubit quantum gates play an essential role in quantum computing, whose operation critically depends on the entanglement between two qubits. Resonantly driven controlled-NOT (CN…

physics.app-ph2017★ 3 cited

Atomically-thin Femtojoule Filamentary Memristor

Huan Zhao, Zhipeng Dong, He Tian +12

The morphology and dimension of the conductive filament formed in a memristive device are strongly influenced by the thickness of its switching medium layer. Aggressive scaling of…