Assessment of High-Frequency Performance Limits of Graphene Field-Effect Transistors

Abstract

High frequency performance limits of graphene field-effect transistors (FETs) down to a channel length of 20nm are examined by using self-consistent quantum simulations. The results indicate that although Klein band-to-band tunneling is significant for sub-100nm graphene FET, it is possible to achieve a good transconductance and ballistic on-off ratio larger than 3 even at a channel length of 20nm. At a channel length of 20nm, the intrinsic cut-off frequency remains at a couple of THz for various gate insulator thickness values, but a thin gate insulator is necessary for a good transconductance and smaller degradation of cut-off frequency in the presence of parasitic capacitance. The intrinsic cut-off frequency is close to the LC characteristic frequency set by graphene kinetic inductance and quantum capacitance, which is about 100GHz \cdot μm divided by the gate length.

24 pages, 7 figures

References in corpus (6)

• Electric Field Effect in Atomically Thin Carbon Films
• Experimental Observation of Quantum Hall Effect and Berry's Phase in Graphene
• Chiral tunneling and the Klein paradox in graphene
• Operation of Graphene Transistors at GHz Frequencies
• Effect of scattering and contacts on current and electrostatics in carbon nanotubes
• Effect of Phonon Scattering on Intrinsic Delay and Cut-Off Frequency of Carbon Nanotube FETs

Cited by in corpus (1)

• Influence of Metal-Graphene Contact on the Operation and Scalability of Graphene Field-Effect-Transistors