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Multilayer graphene under vertical electric field
S. Bala kumar, Jing Guo
We study the effect of vertical electric field (E-field) on the electronic properties of multilayer graphene. We show that the effective mass, electron velocity and density-of-stat…
Assessment of High-Frequency Performance Limits of Graphene Field-Effect Transistors
Jyotsna Chauhan, Jing Guo
High frequency performance limits of graphene field-effect transistors (FETs) down to a channel length of 20nm are examined by using self-consistent quantum simulations. The result…
Performance Comparison of Graphene Nanoribbon FETs with Schottky Contacts and Doped Reservoirs
Youngki Yoon, Gianluca Fiori, Seokmin Hong +2
We present an atomistic 3D simulation study of the performance of graphene nanoribbon (GNR) Schottky barrier (SB) FETs and transistors with doped reservoirs (MOSFETs) by means of t…
Room Temperature All Semiconducting sub-10nm Graphene Nanoribbon Field-Effect Transistors
Xinran Wang, Yijian Ouyang, Xiaolin Li +3
Sub-10nm wide graphene nanoribbon field-effect transistors (GNRFETs) are studied systematically. All sub-10nm GNRs afforded semiconducting FETs without exception, with Ion/Ioff rat…
Effect of edge roughness in graphene nanoribbon transistors
Youngki Yoon, Jing Guo
The effects of edge irregularity and mixed edge shapes on the characteristics of graphene nanoribbon transistors are examined by self-consistent atomistic simulations based on the…
Scaling Behaviors of Graphene Nanoribbon FETs: A Three Dimensional Quantum Simulation Study
Yijian Ouyang*, Youngki Yoon*, Jing Guo
The scaling behaviors of graphene nanoribbon (GNR) Schottky barrier field-effect transistors (SBFETs) are studied by solving the non-equilibrium Green's function (NEGF) transport e…