Projected Performance Advantage of Multilayer Graphene Nanoribbon as Transistor Channel Material
arXiv:0912.2140
Abstract
The performance limits of the multilayer graphene nanoribbon (GNR) field-effect transistor (FET) are assessed and compared to those of monolayer GNR FET and carbon nanotube (CNT) FET. The results show that with a thin high-k gate insulator and reduced interlayer coupling, multilayer GNR FET can significantly outperform its CNT counterpart with a similar gate and bandgap in terms of the ballistic on-current. In the presence of optical phonon scattering, which has a short mean free path in the graphene-derived nanostructures, the advantage of the multilayer GNRFET is even more significant. The simulation results indicate multilayer GNRs with incommensurate non-AB stacking and weak interlayer coupling are the best candidate for high performance GNR FETs.
22 pages, 6 figures
References in corpus (10)
- Electric Field Effect in Atomically Thin Carbon Films
- Experimental Observation of Quantum Hall Effect and Berry's Phase in Graphene
- Energy Gaps in Graphene Nanoribbons
- Intrinsic and Extrinsic Performance Limits of Graphene Devices on SiO2
- Room Temperature All Semiconducting sub-10nm Graphene Nanoribbon Field-Effect Transistors
- High Performance N-Type Carbon Nanotube Field Effect Transistors with Chemically Doped Contacts
- Tight--binding description of the quasiparticle dispersion of graphite and few--layer graphene
- Conductance Quantization in Graphene Nanoribbons
- Room-temperature ballistic transport in narrow graphene strips
- Bandstructure Effects in Silicon Nanowire Electron Transport