activity
20062011
most citedRoom Temperature All Semiconducting sub-10nm Graphene Nanoribbon Field-Effect Transistors

1.5k citations · 2.5k across the 8 of their papers we have counts for

collaborators

8 papers

cond-mat.mes-hall2011★ 220 cited

Graphene Nanoribbons with Smooth Edges Behave as Quantum Wires

Xinran Wang, Yijian Ouyang, Liying Jiao +5

Graphene nanoribbons with perfect edges are predicted to exhibit interesting electronic and spintronic properties, notably quantum-confined bandgaps and magnetic edge states. Howev…

cond-mat.mes-hall2011★ 29 cited

Effects of edge chemistry doping on graphene nanoribbon mobility

Yijian Ouyang, Stefano Sanvito, Jing Guo

Doping of semiconductor is necessary for various device applications. Exploiting chemistry at its reactive edges was shown to be an effective way to dope an atomically thin graphen…

cond-mat.mes-hall2011★ 507 cited

Performance Limits of Monolayer Transition Metal Dichalcogenide Transistors

Leitao Liu, S. Bala Kumar, Yijian Ouyang +1

The performance limits of monolayer transition metal dichalcogenide transistors are examined with a ballistic MOSFET model. Using ab-initio theory, we calculate the band structures…

cond-mat.mes-hall2009

Projected Performance Advantage of Multilayer Graphene Nanoribbon as Transistor Channel Material

Yijian Ouyang, Hongjie Dai, Jing Guo

The performance limits of the multilayer graphene nanoribbon (GNR) field-effect transistor (FET) are assessed and compared to those of monolayer GNR FET and carbon nanotube (CNT) F…

cond-mat.mes-hall2008★ 1.5k cited

Room Temperature All Semiconducting sub-10nm Graphene Nanoribbon Field-Effect Transistors

Xinran Wang, Yijian Ouyang, Xiaolin Li +3

Sub-10nm wide graphene nanoribbon field-effect transistors (GNRFETs) are studied systematically. All sub-10nm GNRs afforded semiconducting FETs without exception, with Ion/Ioff rat…

cond-mat.mes-hall2007★ 156 cited

Scaling Behaviors of Graphene Nanoribbon FETs: A Three Dimensional Quantum Simulation Study

Yijian Ouyang*, Youngki Yoon*, Jing Guo

The scaling behaviors of graphene nanoribbon (GNR) Schottky barrier field-effect transistors (SBFETs) are studied by solving the non-equilibrium Green's function (NEGF) transport e…