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Effects of edge chemistry doping on graphene nanoribbon mobility
Yijian Ouyang, Stefano Sanvito, Jing Guo
Doping of semiconductor is necessary for various device applications. Exploiting chemistry at its reactive edges was shown to be an effective way to dope an atomically thin graphen…
Room Temperature All Semiconducting sub-10nm Graphene Nanoribbon Field-Effect Transistors
Xinran Wang, Yijian Ouyang, Xiaolin Li +3
Sub-10nm wide graphene nanoribbon field-effect transistors (GNRFETs) are studied systematically. All sub-10nm GNRs afforded semiconducting FETs without exception, with Ion/Ioff rat…
Scaling Behaviors of Graphene Nanoribbon FETs: A Three Dimensional Quantum Simulation Study
Yijian Ouyang*, Youngki Yoon*, Jing Guo
The scaling behaviors of graphene nanoribbon (GNR) Schottky barrier field-effect transistors (SBFETs) are studied by solving the non-equilibrium Green's function (NEGF) transport e…
Effect of Phonon Scattering on Intrinsic Delay and Cut-Off Frequency of Carbon Nanotube FETs
Youngki Yoon, Yijian Ouyang, Jing Guo
The effect of phonon scattering on the intrinsic delay and cut-off frequency of Schottky barrier carbon nanotube (CNT) FETs is examined by self-consistently solving the Poisson equ…