Effects of edge chemistry doping on graphene nanoribbon mobility

Abstract

Doping of semiconductor is necessary for various device applications. Exploiting chemistry at its reactive edges was shown to be an effective way to dope an atomically thin graphene nanoribbon (GNR) for realizing new devices in recent experiments. The carrier mobility limited by edge doping is studied as a function of the GNR width, doping density, and carrier density by using ab initio density functional and parameterized tight binding simulations combined with the non-equilibrium Green's function formalism for quantum transport. The results indicate that for GNRs wider than about 4nm, the mobility scales approximately linearly with the GNR width, inversely proportional to the edge doping concentration and decreases for an increasing carrier density. For narrower GNRs, dependence of the mobility on the GNR width and carrier density can be qualitatively different.

arXiv comment15 pages, 7 figures

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• A Comparative Study of Substrates Disorder on Mobility in the Graphene Nanoribbon: Charged Impurity, Surface Optical Phonon, Surface Roughness
• Unconventional charge and spin dependent transport properties of a graphene nanoribbon with line-disorder
• Electron Transfer on Impurity doped Graphene Nanoribbon
• Edge-functionalization of armchair graphene nanoribbons with pentagonal-hexagonal edge structures