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cond-mat.mes-hall2007★ 156 cited
Scaling Behaviors of Graphene Nanoribbon FETs: A Three Dimensional Quantum Simulation Study
Yijian Ouyang*, Youngki Yoon*, Jing Guo
The scaling behaviors of graphene nanoribbon (GNR) Schottky barrier field-effect transistors (SBFETs) are studied by solving the non-equilibrium Green's function (NEGF) transport e…
cond-mat.mes-hall2007★ 93 cited
Gate Electrostatics and Quantum Capacitance of Graphene Nanoribbons
Jing Guo, Youngki Yoon, Yijian Ouyang
Capacitance-voltage (C-V) characteristics are important for understanding fundamental electronic structures and device applications of nanomaterials. The C-V characteristics of gra…