Gate Electrostatics and Quantum Capacitance of Graphene Nanoribbons
arXiv:0705.3068 · doi:10.1021/nl0706190
Abstract
Capacitance-voltage (C-V) characteristics are important for understanding fundamental electronic structures and device applications of nanomaterials. The C-V characteristics of graphene nanoribbons (GNRs) are examined using self-consistent atomistic simulations. The results indicate strong dependence of the GNR C-V characteristics on the edge shape. For zigzag edge GNRs, highly non-uniform charge distribution in the transverse direction due to edge states lowers the gate capacitance considerably, and the self-consistent electrostatic potential significantly alters the band structure and carrier velocity. For an armchair edge GNR, the quantum capacitance is a factor of 2 smaller than its corresponding zigzag carbon nanotube, and a multiple gate geometry is less beneficial for transistor applications. Magnetic field results in pronounced oscillations on C-V characteristics.
to appear in Nano Lett
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