Localized magnetic states in biased bilayer and trilayer graphene
arXiv:0811.3489 · doi:10.1088/0953-8984/21/18/182002
Abstract
We study the localized magnetic states of impurity in biased bilayer and trilayer graphene. It is found that the magnetic boundary for bilayer and trilayer graphene presents the mixing features of Dirac and conventional fermion. For zero gate bias, as the impurity energy approaches the Dirac point, the impurity magnetization region diminishes for bilayer and trilayer graphene. When a gate bias is applied, the dependence of impurity magnetic states on the impurity energy exhibits a different behavior for bilayer and trilayer graphene due to the opening of a gap between the valence and the conduction band in the bilayer graphene with the gate bias applied. The magnetic moment and the corresponding magnetic transition of the impurity in bilayer graphene are also investigated.
16 pages,6 figures
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Cited by in corpus (5)
- Unconventional and Exotic Magnetism in Carbon-Based Structures and Related Materials
- Local moment formation in bilayer graphene
- Magnetism of an adatom on biased AA-stacked bilayer graphene
- Sliding phasons in Moiré Ladders
- Electric field control of spins in bilayer graphene: Local moment formation and local moment interactions