Modeling electrolytically top gated graphene
arXiv:0910.3666 · doi:10.1007/s11671-009-9515-3
Abstract
We investigate doping of a single-layer graphene in the presence of electrolytic top gating. The interfacial phenomena is modeled using a modified Poisson-Boltzmann equation for an aqueous solution of simple salt. We demonstrate both the sensitivity of graphene's doping levels to the salt concentration and the importance of quantum capacitance that arises due to the smallness of the Debye screening length in the electrolyte.
7 pages, including 4 figures, submitted to Nanoscale Research Letters for a special issue related to the NGC 2009 conference (http://asdn.net/ngc2009/index.shtml)
References in corpus (10)
- The electronic properties of graphene
- Detection of Individual Gas Molecules Absorbed on Graphene
- Electrochemically Top Gated Graphene: Monitoring Dopants by Raman Scattering
- Measurement of Scattering Rate and Minimum Conductivity in Graphene
- Carrier Statistics and Quantum Capacitance of Graphene Sheets and Ribbons
- Effect of high-k environment on charge carrier mobility in graphene
- Dipolar Poisson-Boltzmann Equation: Ions and Dipoles Close to Charged Surfaces
- Electronic Structure of gated graphene and graphene ribbons
- Theory of charged impurity scattering in two dimensional graphene
- Gate Electrostatics and Quantum Capacitance of Graphene Nanoribbons