A current-voltage model for Schottky-barrier graphene based transistors

Abstract

A low complexity computational model of the current-voltage characteristics for graphene nano-ribbon (GNR) field effect transistors (FET), able to simulate a hundred of points in few seconds using a PC, is presented. For quantum capacitance controlled devices, self-consistent calculations of the electrostatic potential can be skipped. Instead, analytical closed-form electrostatic potential from Laplace's equation yields accurate results compared with that obtained by self-consistent Non-Equilibrium Green's Functions (NEGF) method. The model includes both tunnelling current through the Schottky barrier (SB) at the contact interfaces and thermionic current above the barrier, properly capturing the effect of arbitrary physical and electrical parameters.

8 pages, 4 figures

References in corpus (5)

• Electric Field Effect in Atomically Thin Carbon Films
• Energy Gaps in Graphene Nanoribbons
• Scaling Behaviors of Graphene Nanoribbon FETs: A Three Dimensional Quantum Simulation Study
• Gate Electrostatics and Quantum Capacitance of Graphene Nanoribbons
• A simple drain current model for Schottky-barrier carbon nanotube field effect transistors

Cited by in corpus (4)

• Universal Scaling Laws in Schottky Heterostructures Based on Two-Dimensional Materials
• Explicit drain current, charge and capacitance model of graphene field-effect transistors
• Extending ballistic graphene FET lumped element models to diffusive devices
• Impact of graphene polycrystallinity on the performance of graphene field-effect transistors