412 citations · 879 across the 5 of their papers we have counts for
5 papers
Physical Removal of Metallic Carbon Nanotubes from Nanotube Network Devices Using a Thermal and Fluidic Process
Alexandra C. Ford, Michael Shaughnessy, Bryan M. Wong +6
Electronic and optoelectronic devices based on thin films of carbon nanotubes are currently limited by the presence of metallic nanotubes. Here we present a novel approach based on…
Observation of degenerate one-dimensional sub-bands in cylindrical InAs nanowires
Alexandra C. Ford, S. Bala Kumar, Rehan Kapadia +2
One-dimensional (1D) sub-bands in cylindrical InAs nanowires (NWs) are electrically mapped as a function of NW diameter in the range of 15-35 nm. At low temperatures, stepwise curr…
Ultrathin compound semiconductor on insulator layers for high performance nanoscale transistors
Hyunhyub Ko, Kuniharu Takei, Rehan Kapadia +13
Over the past several years, the inherent scaling limitations of electron devices have fueled the exploration of high carrier mobility semiconductors as a Si replacement to further…
Diameter-Dependent Electron Mobility of InAs Nanowires
Alexandra Ford, Johnny Ho, Yu-Lun Chueh +5
Temperature-dependent I-V and C-V spectroscopy of single InAs nanowire field-effect transistors were utilized to directly shed light on the intrinsic electron transport properties…
Synthesis, Contact Printing, and Device Characterization of Ni-Catalyzed, Crystalline InAs Nanowires
Alexandra C. Ford, Johnny C. Ho, Zhiyong Fan +5
InAs nanowires have been actively explored as the channel material for high performance transistors owing to their high electron mobility and ease of ohmic metal contact formation.…