412 citations · 879 across the 5 of their papers we have counts for
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cond-mat.mtrl-sci2008★ 376 cited
Diameter-Dependent Electron Mobility of InAs Nanowires
Alexandra Ford, Johnny Ho, Yu-Lun Chueh +5
Temperature-dependent I-V and C-V spectroscopy of single InAs nanowire field-effect transistors were utilized to directly shed light on the intrinsic electron transport properties…
cond-mat.mtrl-sci2008
Synthesis, Contact Printing, and Device Characterization of Ni-Catalyzed, Crystalline InAs Nanowires
Alexandra C. Ford, Johnny C. Ho, Zhiyong Fan +5
InAs nanowires have been actively explored as the channel material for high performance transistors owing to their high electron mobility and ease of ohmic metal contact formation.…