Bi2O2Se nanowires presenting high mobility and strong spin-orbit coupling

Abstract

Systematic electrical transport characterizations were performed on high-quality Bi2O2Se nanowires to illustrate its great transport properties and further application potentials in spintronics. Bi2O2Se nanowires synthesized by chemical vapor deposition method presented a high field-effect mobility up to 1.34*104 cm2V-1s-1, and exhibited ballistic transport in the low back-gate voltage (Vg) regime where conductance plateaus were observed. When further increasing the electron density by increasing Vg, we entered the phase coherent regime and weak antilocalization (WAL) was observed. The spin relaxation length extracted from the WAL was found to be gate tunable, ranging from ~100 nm to ~250 nm and reaching a stronger spin-obit coupling (SOC) than the two-dimensional counterpart (flakes). We attribute the strong SOC and the gate tunability to the presence of a surface accumulation layer which induces a strong inversion asymmetry on the surface. Such scenario was supported by the observation of two Shubnikov-de Haas oscillation frequencies that correspond to two types of carriers, one on the surface, and the other in the bulk. The high-quality Bi2O2Se nanowires with a high mobility and a strong SOC can act as a very prospective material in future spintronics.

arXiv comment22 pages, 7 figures

References in corpus (18)

• Spintronics: Fundamentals and applications
• Majorana Fermions and a Topological Phase Transition in Semiconductor-Superconductor Heterostructures
• Helical liquids and Majorana bound states in quantum wires
• Non-Abelian statistics and topological quantum information processing in 1D wire networks
• Spin-orbit qubit in a semiconductor nanowire
• Two-dimensional Transport Induced Linear Magneto-Resistance in Topological Insulator Bi${}_2$Se${}_3$ Nanoribbons
• Linear magnetoresistance in topological insulators: Quantum phase coherence effects at high temperatures
• Self-Modulation Doping Effect in the High-Mobility Layered Semiconductor Bi2O2Se
• Towards high mobility InSb nanowire devices
• Multi-mode Fabry-Pérot conductance oscillations in suspended stacking-faults-free InAs nanowires
• Observation of degenerate one-dimensional sub-bands in cylindrical InAs nanowires
• Strong spin-orbit interaction and magnetotransport in semiconductor Bi${}_2$O${}_2$Se nanoplates
• Spin-orbit interaction in a dual gated InAs/GaSb quantum well
• Selective Control of Conductance Modes in Multi-terminal Josephson Junctions
• Spin transport in ferromagnet-InSb nanowire quantum devices
• Magnitude and Spatial Distribution Control of the Supercurrent in Bi2O2Se-Based Josephson Junction
• Universal conductance fluctuations and phase-coherent transport in a semiconductor Bi${}_2$O${}_2$Se nanoplate with strong spin-orbit interaction
• Gate-tunable h/e-period magnetoresistance oscillations in Bi2O2Se nanowires