paper

Spin-orbit interaction in a dual gated InAs/GaSb quantum well

arXiv:1704.03482 · doi:10.1103/PhysRevB.96.241401

Abstract

Spin-orbit interaction is investigated in a dual gated InAs/GaSb quantum well. Using an electric field the quantum well can be tuned between a single carrier regime with exclusively electrons as carriers and a two-carriers regime where electrons and holes coexist. Spin-orbit interaction in both regimes manifests itself as a beating in the Shubnikov-de Haas oscillations. In the single carrier regime the linear Dresselhaus strength is characterized by 28.5 meV and the Rashba coefficient is tuned from 75 to 53 meV by changing the electric field. In the two-carriers regime the spin splitting shows a nonmonotonic behavior with gate voltage, which is consistent with our band structure calculations.

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