Spin-orbit interaction in a dual gated InAs/GaSb quantum well
arXiv:1704.03482 · doi:10.1103/PhysRevB.96.241401
Abstract
Spin-orbit interaction is investigated in a dual gated InAs/GaSb quantum well. Using an electric field the quantum well can be tuned between a single carrier regime with exclusively electrons as carriers and a two-carriers regime where electrons and holes coexist. Spin-orbit interaction in both regimes manifests itself as a beating in the Shubnikov-de Haas oscillations. In the single carrier regime the linear Dresselhaus strength is characterized by 28.5 meV and the Rashba coefficient is tuned from 75 to 53 meV by changing the electric field. In the two-carriers regime the spin splitting shows a nonmonotonic behavior with gate voltage, which is consistent with our band structure calculations.
References in corpus (7)
- Quantum Spin Hall Effect in Inverted Type II Semiconductors
- Gate-controlled spin-orbit interaction in a parabolic GaAs/AlGaAs quantum well
- Giant spin-orbit splitting in inverted InAs/GaSb double quantum wells
- Effective g-factors of carriers in inverted InAs/GaSb bilayers
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- Experimental determination of Rashba and Dresselhaus parameters and -factor anisotropy via Shubnikov-de Haas oscillations
- Anomalous Rashba spin-orbit interaction in InAs/GaSb quantum wells
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