High mobility back-gated InAs/GaSb double quantum well grown on GaSb substrate
arXiv:1412.4817 · doi:10.1063/1.4906589
Abstract
We report a backgated InAs/GaSb double quantum well device grown on GaSb substrate. The use of the native substrate allows for high materials quality with electron mobility in excess of 500,000 cm2/Vs at sheet charge density of 8x1011 cm-2 and approaching 100,000 cm2/Vs near the charge neutrality point (CNP). Lattice matching between the quantum well structure and the substrate eliminates the need for a thick buffer, enabling large back gate capacitance and efficient coupling with the conduction channels in the quantum wells. As a result, quantum Hall effects are observed in both electron and hole regimes across the hybridization gap.
arXiv comment12 pages, 5 figures
References in corpus (6)
- Evidence for Helical Edge Modes in Inverted InAs/GaSb Quantum Wells
- Quantum Spin Hall Effect in Inverted Type II Semiconductors
- Images of edge current in InAs/GaSb quantum wells
- Edge Channel Transport in InAs/GaSb Topological Insulating Phase
- Finite Conductivity in Mesoscopic Hall Bars of Inverted InAs/GaSb Quantum Wells
- Insulating state and giant non-local response in an InAs/GaSb quantum well in the quantum Hall regime
Cited by in corpus (11)
- Edge Transport in the Trivial Phase of InAs/GaSb
- Electric and Magnetic Tuning Between the Trivial and Topological Phases in InAs/GaSb Double Quantum Wells
- Edge transport in InAs and InAs/GaSb quantum wells
- Gate-controlled semimetal-topological insulator transition in an InAs/GaSb heterostructure
- Decoupling edge versus bulk conductance in the trivial regime of an InAs/GaSb double quantum well using Corbino ring geometry
- Giant spin-orbit splitting in inverted InAs/GaSb double quantum wells
- Spin-orbit interaction in a dual gated InAs/GaSb quantum well
- Low-Temperature Conductivity of Weakly Interacting Quantum Spin Hall Edges in Strained-Layer InAs/GaInSb
- Circular and Linear Photogalvanic Effects in Type-II GaSb/InAs Quantum Well Structures in the Inverted Regime
- Coexistence of Topological and Normal Insulating Phases in Electro-Optically Tuned InAs/GaSb Bilayer Quantum Wells
- Impact of epitaxial strain on the topological-nontopological phase diagram and semimetallic behavior of InAs/GaSb composite quantum wells