activity
20102017
most citedEdge Transport in the Trivial Phase of InAs/GaSb

128 citations · 666 across the 10 of their papers we have counts for

collaborators

11 papers

cond-mat.mes-hall2017★ 44 cited

superconducting quantum interference through trivial edge states in InAs

Folkert K. de Vries, Tom Timmerman, Viacheslav P. Ostroukh +11

Josephson junctions defined in strong spin orbit semiconductors are highly interesting for the search for topological systems. However, next to topological edge states that emerge…

cond-mat.mes-hall2016★ 69 cited

Quantized conductance and large g-factor anisotropy in InSb quantum point contacts

Fanming Qu, Jasper van Veen, Folkert K. de Vries +10

Due to a strong spin-orbit interaction and a large Landé g-factor, InSb plays an important role in research on Majorana fermions. To further explore novel properties of Majorana fe…

cond-mat.mes-hall2016★ 45 cited

Decoupling edge versus bulk conductance in the trivial regime of an InAs/GaSb double quantum well using Corbino ring geometry

Binh-Minh Nguyen, Andrey A. Kiselev, Ramsey Noah +13

A Corbino ring geometry is utilized to analyze edge and bulk conductance of InAs/GaSb quantum well structures. We show that edge conductance exists in the trivial regime of this th…

cond-mat.mes-hall2016★ 41 cited

Giant spin-orbit splitting in inverted InAs/GaSb double quantum wells

Fabrizio Nichele, Morten Kjaergaard, Henri J. Suominen +11

Transport measurements in inverted InAs/GaSb quantum wells reveal a giant spin-orbit splitting of the energy bands close to the hybridization gap. The splitting results from the in…

cond-mat.mes-hall2015★ 128 cited

Edge Transport in the Trivial Phase of InAs/GaSb

Fabrizio Nichele, Henri J. Suominen, Morten Kjaergaard +16

We present transport and scanning SQUID measurements on InAs/GaSb double quantum wells, a system predicted to be a two-dimensional topological insulator. Top and back gates allow i…

cond-mat.mes-hall2015★ 38 cited

Gate-tunable high mobility remote-doped InSb/In_{1-x}Al_{x}Sb quantum well heterostructures

Wei Yi, Andrey A. Kiselev, Jacob Thorp +13

Gate-tunable high-mobility InSb/In_{1-x}Al_{x}Sb quantum wells (QWs) grown on GaAs substrates are reported. The QW two-dimensional electron gas (2DEG) channel mobility in excess of…