128 citations · 666 across the 10 of their papers we have counts for
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cond-mat.mes-hall2014★ 19 cited
High mobility back-gated InAs/GaSb double quantum well grown on GaSb substrate
Binh-Minh Nguyen, Wei Yi, Ramsey Noah +2
We report a backgated InAs/GaSb double quantum well device grown on GaSb substrate. The use of the native substrate allows for high materials quality with electron mobility in exce…
cond-mat.mes-hall2014
Undoped accumulation-mode Si/SiGe quantum dots
Matthew G. Borselli, Kevin Eng, Richard S. Ross +11
We report on a quantum dot device design that combines the low disorder properties of undoped SiGe heterostructure materials with an overlapping gate stack in which each electrosta…