Pauli spin blockade in undoped Si/SiGe two-electron double quantum dots

Abstract

We demonstrate double quantum dots fabricated in undoped Si/SiGe heterostructures relying on a double top-gated design. Charge sensing shows that we can reliably deplete these devices to zero charge occupancy. Measurements and simulations confirm that the energetics are determined by the gate-induced electrostatic potentials. Pauli spin blockade has been observed via transport through the double dot in the two electron configuration, a critical step in performing coherent spin manipulations in Si.

4 pages, 4 figures

References in corpus (4)

• Tunable spin-selective loading of a silicon spin qubit
• Pauli-Spin-Blockade Transport through a Silicon Double Quantum Dot
• Measurement of valley splitting in high-symmetry Si/SiGe quantum dots
• Fast tunnel rates in Si/SiGe one-electron single and double quantum dots

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