303 citations · 583 across the 5 of their papers we have counts for
6 papers
Strong Coupling of a Single Electron in Silicon to a Microwave Photon
X. Mi, J. V. Cady, D. M. Zajac +2
Silicon is vital to the computing industry due to the high quality of its native oxide and well-established doping technologies. Isotopic purification has enabled quantum coherence…
Undoped accumulation-mode Si/SiGe quantum dots
Matthew G. Borselli, Kevin Eng, Richard S. Ross +11
We report on a quantum dot device design that combines the low disorder properties of undoped SiGe heterostructure materials with an overlapping gate stack in which each electrosta…
Charge Relaxation in a Single Electron Si/SiGe Double Quantum Dot
K. Wang, C. Payette, Y. Dovzhenko +2
We measure the interdot charge relaxation time T_1 of a single electron trapped in an accumulation mode Si/SiGe double quantum dot. The energy level structure of the charge qubit i…
Pauli spin blockade in undoped Si/SiGe two-electron double quantum dots
Matthew G. Borselli, Kevin Eng, Edward T. Croke +12
We demonstrate double quantum dots fabricated in undoped Si/SiGe heterostructures relying on a double top-gated design. Charge sensing shows that we can reliably deplete these devi…
Measurement of valley splitting in high-symmetry Si/SiGe quantum dots
Matthew G. Borselli, Richard S. Ross, Andrey A. Kiselev +12
We have demonstrated few-electron quantum dots in Si/SiGe and InGaAs, with occupation number controllable from N = 0. These display a high degree of spatial symmetry and identifiab…
Lifetime measurements (T1) of electron spins in Si/SiGe quantum dots
Robert R. Hayes, Andrey A. Kiselev, Matthew G. Borselli +10
We have observed the Zeeman-split excited state of a spin-1/2 multi-electron Si/SiGe depletion quantum dot and measured its spin relaxation time T1 in magnetic fields up to 2 T. Us…