activity
20002026
most citedMeasurement of valley splitting in high-symmetry Si/SiGe quantum dots

96 citations · 317 across the 8 of their papers we have counts for

collaborators

8 papers

quant-ph2026

A digitally controlled silicon quantum processing unit

Members of the HRL Quantum Team, Collaborators, : +255

Commercially-relevant quantum computers will require large numbers of high-performing qubits that can be manufactured, integrated, and controlled at scale. Silicon exchange-only (E…

quant-ph2022★ 61 cited

Fast and high-fidelity state preparation and measurement in triple-quantum-dot spin qubits

Jacob Z. Blumoff, Andrew S. Pan, Tyler E. Keating +19

We demonstrate rapid, high-fidelity state preparation and measurement in exchange-only Si/SiGe triple-quantum-dot qubits. Fast measurement integration ( ns) and initialization…

cond-mat.mes-hall2011★ 85 cited

Pauli spin blockade in undoped Si/SiGe two-electron double quantum dots

Matthew G. Borselli, Kevin Eng, Edward T. Croke +12

We demonstrate double quantum dots fabricated in undoped Si/SiGe heterostructures relying on a double top-gated design. Charge sensing shows that we can reliably deplete these devi…

cond-mat.mes-hall2010★ 96 cited

Measurement of valley splitting in high-symmetry Si/SiGe quantum dots

Matthew G. Borselli, Richard S. Ross, Andrey A. Kiselev +12

We have demonstrated few-electron quantum dots in Si/SiGe and InGaAs, with occupation number controllable from N = 0. These display a high degree of spatial symmetry and identifiab…

cond-mat.mes-hall2009★ 17 cited

Lifetime measurements (T1) of electron spins in Si/SiGe quantum dots

Robert R. Hayes, Andrey A. Kiselev, Matthew G. Borselli +10

We have observed the Zeeman-split excited state of a spin-1/2 multi-electron Si/SiGe depletion quantum dot and measured its spin relaxation time T1 in magnetic fields up to 2 T. Us…

cond-mat.mes-hall2006★ 8 cited

Sputtered Gold as an Effective Schottky Gate for Strained Si/SiGe Nanostructures

G. D. Scott, M. Xiao, E. T. Croke +2

Metallization of Schottky surface gates by sputtering Au on strained Si/SiGe heterojunctions enables the depletion of the two dimensional electron gas (2DEG) at a relatively small…