Sputtered Gold as an Effective Schottky Gate for Strained Si/SiGe Nanostructures
arXiv:cond-mat/0611158 · doi:10.1063/1.2430935
Abstract
Metallization of Schottky surface gates by sputtering Au on strained Si/SiGe heterojunctions enables the depletion of the two dimensional electron gas (2DEG) at a relatively small voltage while maintaining an extremely low level of leakage current. A fabrication process has been developed to enable the formation of sub-micron Au electrodes sputtered onto Si/SiGe without the need of a wetting layer.
arXiv comment3 pages, 3 figures
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