Si/SiGe quantum dot with superconducting single-electron transistor charge sensor

Abstract

We report a robust process for fabrication of surface-gated Si/SiGe quantum dots (QDs) with an integrated superconducting single-electron transistor (S-SET) charge sensor. A combination of a deep mesa etch and AlOx backfill is used to reduce gate leakage. After the leakage current is suppressed, Coulomb oscillations of the QD and the current-voltage characteristics of the S-SET are observed at a temperature of 0.3 K. Coupling of the S-SET to the QD is confirmed by using the S-SET to perform sensing of the QD charge state.

4 pages, 3 figures

References in corpus (14)

• Kondo Physics in a Single Electron Transistor
• Single-shot read-out of an individual electron spin in a quantum dot
• Single-shot readout of an electron spin in silicon
• Electron Spin-Relaxation Times of Phosphorus Donors in Silicon
• Decoherence of electron spin qubits in Si-based quantum computers
• Charge sensing and controllable tunnel coupling in a Si/SiGe double quantum dot
• An ultra sensitive radio frequency single electron transistor working up to 4.2 K
• Enhancement mode double top gated MOS nanostructures with tunable lateral geometry
• Long spin coherence in silicon with an electrical spin trap readout
• Coulomb Blockade in a Silicon/Silicon-Germanium Two-Dimensional Electron Gas Quantum Dot
• Coulomb blockade and Kondo effect in a few-electron silicon/silicon-germanium quantum dot
• Quantum dots in Si/SiGe 2DEGs with Schottky top-gated leads
• On-Chip Matching Networks for Radio-Frequency Single-Electron-Transistors
• Sputtered Gold as an Effective Schottky Gate for Strained Si/SiGe Nanostructures

Cited by in corpus (8)

• Silicon Quantum Electronics
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• Dispersive Readout of a Few-Electron Double Quantum Dot with Fast rf Gate-Sensors
• Few electron double quantum dot in an isotopically purified ${}^{28}$Si quantum well
• Single-shot readout of a driven hybrid qubit in a GaAs double quantum dot
• Coherent electrical rotations of valley states in Si quantum dots using the phase of the valley-orbit coupling
• Signatures of Valley Kondo Effect in Si/SiGe Quantum Dots