Few electron double quantum dot in an isotopically purified ${}^{28}$Si quantum well

Abstract

We present a few electron double quantum dot (QD) device defined in an isotopically purified ${}^{28}$Si quantum well (QW). An electron mobility of $5.5\cdot 10^{4}c{m}^2(Vs{)}^{-1}$ is observed in the QW which is the highest mobility ever reported for a 2D electron system in ${}^{28}$Si. The residual concentration of ${}^{29}$Si nuclei in the ${}^{28}$Si QW is lower than $10^{3}ppm$, at the verge where the hyperfine interaction is theoretically no longer expected to dominantly limit the $T_2$ spin dephasing time. We also demonstrate a complete suppression of hysteretic gate behavior and charge noise using a negatively biased global top gate.

4 pages, 3 figures

References in corpus (6)

• Electron spin decoherence in isotope-enriched silicon
• Single-shot measurement of triplet-singlet relaxation in a Si/SiGe double quantum dot
• In situ reduction of charge noise in GaAs/AlGaAs Schottky-gated devices
• Single charge sensing and transport in double quantum dots fabricated from commercially grown Si/SiGe heterostructures
• A Schottky top-gated two-dimensional electron system in a nuclear spin free Si/SiGe heterostructure
• Si/SiGe quantum dot with superconducting single-electron transistor charge sensor

Cited by in corpus (15)

• Silicon Quantum Electronics
• Suppressing qubit dephasing using real-time Hamiltonian estimation
• Low-frequency spin qubit detuning noise in highly purified ${}^{28}$Si/SiGe
• Quantum Decoherence of the Central Spin in a Sparse System of Dipolar Coupled Spins
• Fast Electrical Control of Single Electron Spins in Quantum Dots with Vanishing Influence from Nuclear Spins
• Large, tunable valley splitting and single-spin relaxation mechanisms in a Si/Si${}_x$Ge${}_{1-x}$ quantum dot
• Blueprint of a scalable spin qubit shuttle device for coherent mid-range qubit transfer in disordered Si/SiGe/SiO${}_2$
• Spatial noise correlations beyond nearest-neighbor in ${}^{28}$Si/SiGe spin qubits
• Characterization and Suppression of Low-frequency Noise in Si/SiGe Quantum Point Contacts and Quantum Dots
• Theory of Spin Relaxation in Two-Electron Lateral Coupled Si/SiGe Quantum Dots
• Atomistic compositional details and their importance for spin qubits in isotope-purified silicon-germanium quantum wells
• Equilibration in closed quantum systems: Application to spin qubits
• Experimental investigation of the optical spin selection rules in bulk Si and Ge/Si quantum dots
• Sensing dot with high output swing for scalable baseband readout of spin qubits
• Compilation Techniques for Spin Qubits in a Shuttling Bus Architecture