Quantum Hall Resistance Overshoot in 2-Dimensional Electron Gases - Theory and Experiment

Abstract

We present a systematical experimental investigation of an unusual transport phenomenon observed in two dimensional electron gases in Si/SiGe heterostructures under integer quantum Hall effect (IQHE) conditions. This phenomenon emerges under specific experimental conditions and in different material systems. It is commonly referred to as Hall resistance overshoot, however, lacks a consistent explanation so far. Based on our experimental findings we are able to develop a model that accounts for all of our observations in the framework of a screening theory for the IQHE. Within this model the origin of the overshoot is attributed to a transport regime where current is confined to co-existing evanescent incompressible strips of different filling factors.

26 pages, 10 figures

References in corpus (5)

• Realistic modelling of quantum point contacts subject to high magnetic fields and with current bias at out of linear response regime
• Range-Dependent Disorder Effects on the Plateau-Widths Calculated within the Screening Theory of the Iqhe
• Investigations on unconventional aspects in the quantum Hall regime of narrow gate defined channels
• The spin-split incompressible edge states within empirical Hartree approximation at intermediately large Hall samples
• The effect of disorder within the interaction theory of integer quantized Hall effect

Cited by in corpus (7)

• Part-per-million quantization and current-induced breakdown of the quantum anomalous Hall effect
• Few electron double quantum dot in an isotopically purified ${}^{28}$Si quantum well
• Single charge sensing and transport in double quantum dots fabricated from commercially grown Si/SiGe heterostructures
• Evanescent incompressible strips as origin of the observed Hall resistance overshoot
• A realistic quantum capacitance model for quantum Hall edge state based Fabry-Pérot interferometers
• The visibility of IQHE at sharp edges: Experimental proposals based on interactions and edge electrostatics
• The Dip Effect under Integer Quantized Hall Conditions