Single charge sensing and transport in double quantum dots fabricated from commercially grown Si/SiGe heterostructures

Abstract

We perform quantum Hall measurements on three types of commercially available modulation doped Si/SiGe heterostructures to determine their suitability for depletion gate defined quantum dot devices. By adjusting the growth parameters, we are able to achieve electron gases with charge densities 1-3 X 10^{11}/cm^2 and mobilities in excess of 100,000 cm^2/Vs. Double quantum dot devices fabricated on these heterostructures show clear evidence of single charge transitions as measured in dc transport and charge sensing and exhibit electron temperatures of 100 mK in the single quantum dot regime.

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References in corpus (1)

• Fast tunnel rates in Si/SiGe one-electron single and double quantum dots

Cited by in corpus (9)

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• Investigation of Mobility Limiting Mechanisms in Undoped Si/SiGe Heterostructures
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• Characterization and Suppression of Low-frequency Noise in Si/SiGe Quantum Point Contacts and Quantum Dots
• Tailoring potentials by simulation-aided design of gate layouts for spin qubit applications
• Preserving Coulomb blockade in transport spectroscopy of quantum dots, by dynamical tunnel-barrier compensation
• Control of threshold voltages in Si/SiGe quantum devices via optical illumination