3 papers
cond-mat.mes-hall2020
Hole spin in tunable Ge hut wire double quantum dot
Gang Xu, Fei Gao, Ke Wang +8
Holes in germanium (Ge) exhibit strong spin-orbit interaction, which can be exploited for fast and all-electrical manipulation of spin states. Here, we report transport experiments…
cond-mat.mes-hall2019
Dipole coupling of a tunable hole double quantum dot in germanium hut wire to a microwave resonator
Gang Xu, Yan Li, Fei Gao +8
The germanium (Ge) hut wire system has strong spin-orbit coupling, a long coherence time due to a very large heavy-light hole splitting, and the advantage of site-controlled large-…
cond-mat.mes-hall2019
Improving mobility of silicon metal-oxide-semiconductor devices for quantum dots by high vacuum activation annealing
Ke Wang, Hai-Ou Li, Gang Luo +10
To improve mobility of fabricated silicon metal-oxide-semiconductor (MOS) quantum devices, forming gas annealing is a common method used to mitigate the effects of disorder at the…