Controlling Synthetic Spin-Orbit Coupling in a Silicon Quantum Dot with Magnetic Field

Abstract

Tunable synthetic spin-orbit coupling (s-SOC) is one of the key challenges in various quantum systems, such as ultracold atomic gases, topological superconductors, and semiconductor quantum dots. Here we experimentally demonstrate controlling the s-SOC by investigating the anisotropy of spin-valley resonance in a silicon quantum dot. As we rotate the applied magnetic field in-plane, we find a striking nonsinusoidal behavior of resonance amplitude that distinguishes s-SOC from the intrinsic spin-orbit coupling (i-SOC), and associate this behavior with the previously overlooked in-plane transverse magnetic field gradient. Moreover, by theoretically analyzing the experimentally measured s-SOC field, we predict the quality factor of the spin qubit could be optimized if the orientation of the in-plane magnetic field is rotated away from the traditional working point.

arXiv comment26 pages, 10 figures

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• Flopping-mode spin qubit in a Si-MOS quantum dot
• Single spin qubit geometric gate in a silicon quantum dot
• Line Shapes of Electric Dipole Spin Resonance in Pauli Spin Blockade
• Anisotropy with respect to the applied magnetic field of spin qubit decoherence times
• Theory of Silicon Spin Qubit Relaxation in a Synthetic Spin-Orbit Field
• Singlet-triplet-state readout in silicon-metal-oxide-semiconductor double quantum dots
• Integration of Cobalt Ferromagnetic Control Gates for Electrical and Magnetic Manipulation of Semiconductor Quantum Dots
• A diverse set of two-qubit gates for spin qubits in semiconductor quantum dots
• Correcting on-chip distortion of control pulses with silicon spin qubits
• A SWAP Gate for Spin Qubits in Silicon
• Quantum gates in coupled quantum dots controlled by coupling modulation