activity
20172022
most citedQuantum microwave-optical interface with nitrogen-vacancy centers in diamond

52 citations · 85 across the 4 of their papers we have counts for

collaborators

10 papers

cond-mat.mes-hall20221 cited

Quantum Interference and Coherent Population Trapping in a Double Quantum Dot

Yuan Zhou, Ke Wang, He Liu +5

Quantum interference is a natural consequence of wave-particle duality in quantum mechanics, and is widely observed at the atomic scale. One interesting manifestation of quantum in…

cond-mat.mes-hall2020

Controlling Synthetic Spin-Orbit Coupling in a Silicon Quantum Dot with Magnetic Field

Xin Zhang, Yuan Zhou, Rui-Zi Hu +12

Tunable synthetic spin-orbit coupling (s-SOC) is one of the key challenges in various quantum systems, such as ultracold atomic gases, topological superconductors, and semiconducto…

quant-ph2020

Enhancing spin-phonon and spin-spin interactions using linear resources in a hybrid quantum system

Peng-Bo Li, Yuan Zhou, Wei-Bo Gao +1

Hybrid spin-mechanical setups offer a versatile platform for quantum science and technology, but improving the spin-phonon as well as the spin-spin couplings of such systems remain…

quant-ph2020

Phononic waveguide assisted steady state entanglement of SiV centers

Yi-Fan Qiao, Hong-Zhen Li, Xing-Liang Dong +3

Multiparticle entanglement is of great significance for quantum metrology and quantum information processing. We here present an efficient scheme to generate stable multiparticle e…

cond-mat.mes-hall2019

Giant anisotropy of spin relaxation and spin-valley mixing in a silicon quantum dot

Xin Zhang, Rui-Zi Hu, Hai-Ou Li +11

In silicon quantum dots (QDs), at a certain magnetic field commonly referred to as the "hot spot", the electron spin relaxation rate (T_1^(-1)) can be drastically enhanced due to s…

cond-mat.mes-hall2019

Improving mobility of silicon metal-oxide-semiconductor devices for quantum dots by high vacuum activation annealing

Ke Wang, Hai-Ou Li, Gang Luo +10

To improve mobility of fabricated silicon metal-oxide-semiconductor (MOS) quantum devices, forming gas annealing is a common method used to mitigate the effects of disorder at the…