Flopping-mode spin qubit in a Si-MOS quantum dot

Abstract

Spin qubits based on silicon metal-oxide semiconductor (Si-MOS) quantum dots (QDs) are promising platforms for large-scale quantum computers. To control spin qubits in QDs, electric dipole spin resonance (EDSR) has been most commonly used in recent years. By delocalizing an electron across a double quantum dots charge state, flopping-mode EDSR has been realized in Si/SiGe QDs. Here, we demonstrate a flopping-mode spin qubit in a Si-MOS QD via Elzerman single-shot readout. When changing the detuning with a fixed drive power, we achieve s-shape spin resonance frequencies, an order of magnitude improvement in the spin Rabi frequencies, and virtually constant spin dephasing times. Our results offer a route to large-scale spin qubit systems with higher control fidelity in Si-MOS QDs.

5 pages, 4 figures

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Cited by in corpus (8)

• Single spin qubit geometric gate in a silicon quantum dot
• Singlet-triplet-state readout in silicon-metal-oxide-semiconductor double quantum dots
• A diverse set of two-qubit gates for spin qubits in semiconductor quantum dots
• A SWAP Gate for Spin Qubits in Silicon
• Correcting on-chip distortion of control pulses with silicon spin qubits
• Quantum gates in coupled quantum dots controlled by coupling modulation
• The effects of alloy disorder on strongly-driven flopping mode qubits in Si/SiGe
• Sweet-spot protection of hole spins in sparse arrays via spin-dependent magnetotunneling