activity
20192021
collaborators

5 papers

cond-mat.mes-hall2021

Anisotropic g-Factor and Spin-Orbit Field in a Ge Hut Wire Double Quantum Dot

Ting Zhang, He Liu, Fei Gao +9

Holes in nanowires have drawn significant attention in recent years because of the strong spin-orbit interaction, which plays an important role in constructing Majorana zero modes…

cond-mat.mes-hall2020

Controlling Synthetic Spin-Orbit Coupling in a Silicon Quantum Dot with Magnetic Field

Xin Zhang, Yuan Zhou, Rui-Zi Hu +12

Tunable synthetic spin-orbit coupling (s-SOC) is one of the key challenges in various quantum systems, such as ultracold atomic gases, topological superconductors, and semiconducto…

cond-mat.mes-hall2019

Giant anisotropy of spin relaxation and spin-valley mixing in a silicon quantum dot

Xin Zhang, Rui-Zi Hu, Hai-Ou Li +11

In silicon quantum dots (QDs), at a certain magnetic field commonly referred to as the "hot spot", the electron spin relaxation rate (T_1^(-1)) can be drastically enhanced due to s…

cond-mat.mes-hall2019

Semiconductor Quantum Computation

Xin Zhang, Hai-Ou Li, Gang Cao +3

Semiconductors, a significant type of material in the information era, are becoming more and more powerful in the field of quantum information. In the last decades, semiconductor q…

cond-mat.mes-hall2019

Improving mobility of silicon metal-oxide-semiconductor devices for quantum dots by high vacuum activation annealing

Ke Wang, Hai-Ou Li, Gang Luo +10

To improve mobility of fabricated silicon metal-oxide-semiconductor (MOS) quantum devices, forming gas annealing is a common method used to mitigate the effects of disorder at the…