175 citations · 467 across the 9 of their papers we have counts for
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cond-mat.mes-hall2019★ 50 cited
Giant anisotropy of spin relaxation and spin-valley mixing in a silicon quantum dot
Xin Zhang, Rui-Zi Hu, Hai-Ou Li +11
In silicon quantum dots (QDs), at a certain magnetic field commonly referred to as the "hot spot", the electron spin relaxation rate (T_1^(-1)) can be drastically enhanced due to s…
cond-mat.mes-hall2019★ 175 cited
Semiconductor Quantum Computation
Xin Zhang, Hai-Ou Li, Gang Cao +3
Semiconductors, a significant type of material in the information era, are becoming more and more powerful in the field of quantum information. In the last decades, semiconductor q…
cond-mat.mes-hall2019★ 11 cited
Improving mobility of silicon metal-oxide-semiconductor devices for quantum dots by high vacuum activation annealing
Ke Wang, Hai-Ou Li, Gang Luo +10
To improve mobility of fabricated silicon metal-oxide-semiconductor (MOS) quantum devices, forming gas annealing is a common method used to mitigate the effects of disorder at the…