Gate-Tunable Spin-Orbit Coupling in a Germanium Hole Double Quantum Dot

Abstract

Hole spins confined in semiconductor quantum dot systems have gained considerable interest for their strong spin-orbit interactions (SOIs) and relatively weak hyperfine interactions. Here we experimentally demonstrate a tunable SOI in a double quantum dot in a Germanium (Ge) hut wire (HW), which could help enable fast all-electric spin manipulations while suppressing unwanted decoherence. Specifically, we measure the transport spectra in the Pauli spin blockade regime in the double quantum dot device.By adjusting the interdot tunnel coupling, we obtain an electric field tuned spin-orbit length lso = 2.0 - 48.9 nm. This tunability of the SOI could pave the way toward the realization of high-fidelity qubits in Ge HW systems.

23 pages, 5 figures

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• Heavy hole states in Germanium hut wires
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Cited by in corpus (13)

• Recent advances in hole-spin qubits
• Electrical operation of planar Ge hole spin qubits in an in-plane magnetic field
• Enhanced orbital magnetic field effects in Ge hole nanowires
• Electrical operation of hole spin qubits in planar MOS silicon quantum dots
• Microscopic analysis of proximity-induced superconductivity and metallization effects in superconductor-germanium hole nanowires
• Coupling of hole double quantum dot in planar germanium to a microwave cavity
• Single-step high-fidelity three-qubit gates by anisotropic chiral interactions
• Dephasing of planar Ge hole spin qubits due to 1/$\text{f}$ charge noise
• Nonmonotonic buildup of spin-singlet correlations in a double quantum dot
• Scalable and Tunable In-Plane Ge/Si(001) Nanowires Grown by Molecular Beam Epitaxy
• Pauli spin blockade at room temperature in double-quantum-dot tunneling through individual deep dopants in silicon
• Supercurrent and multiple Andreev reflections in Ge hut nanowire Josephson Junctions
• Anomalous zero-field splitting for hole spin qubits in Si and Ge quantum dots