Gate-Tunable Spin-Orbit Coupling in a Germanium Hole Double Quantum Dot

Abstract

Hole spins confined in semiconductor quantum dot systems have gained considerable interest for their strong spin-orbit interactions (SOIs) and relatively weak hyperfine interactions. Here we experimentally demonstrate a tunable SOI in a double quantum dot in a Germanium (Ge) hut wire (HW), which could help enable fast all-electric spin manipulations while suppressing unwanted decoherence. Specifically, we measure the transport spectra in the Pauli spin blockade regime in the double quantum dot device.By adjusting the interdot tunnel coupling, we obtain an electric field tuned spin-orbit length lso = 2.0 - 48.9 nm. This tunability of the SOI could pave the way toward the realization of high-fidelity qubits in Ge HW systems.

arXiv comment23 pages, 5 figures

References in corpus (54)

• Spins in few-electron quantum dots
• An addressable quantum dot qubit with fault-tolerant control fidelity
• A CMOS silicon spin qubit
• Control and Detection of Singlet-Triplet Mixing in a Random Nuclear Field
• Spin-flip transitions between Zeeman sublevels in semiconductor quantum dots
• Phonon-induced decay of the electron spin in quantum dots
• A four-qubit germanium quantum processor
• The germanium quantum information route
• Spin decoherence of a heavy hole coupled to nuclear spins in a quantum dot
• Fast two-qubit logic with holes in germanium
• Ge hole spin qubit
• A fault-tolerant addressable spin qubit in a natural silicon quantum dot
• Spin Relaxation in Ge/Si Core-Shell Nanowire Qubits
• Strong Spin-Orbit Interaction and Helical Hole States in Ge/Si Nanowires
• A single-hole spin qubit
• Electric Dipole Spin Resonance for Heavy Holes in Quantum Dots
• Semiconductor Quantum Computation
• Ultrafast Hole Spin Qubit with Gate-Tunable Spin-Orbit Switch
• A singlet triplet hole spin qubit in planar Ge
• Electrical control over single hole spins in nanowire quantum dots
• Ultrafast coherent control of a hole spin qubit in a germanium quantum dot
• Pauli Spin Blockade in the Presence of Strong Spin-Orbit Coupling
• Pauli Spin Blockade in a Highly Tunable Silicon Double Quantum Dot
• Direct Rashba spin-orbit interaction in Si and Ge nanowires with different growth directions
• Electron Transport in Double Quantum Dot governed by Nuclear Magnetic Field
• Circuit QED with Hole-Spin Qubits in Ge/Si Nanowire Quantum Dots
• Disentangling the effects of spin-orbit and hyperfine interactions on spin blockade
• Theory of phonon-induced spin relaxation in laterally coupled quantum dots
• Hyperfine interactions in silicon quantum dots
• Monolithic growth of ultra-thin Ge nanowires on Si(001)
• Singlet-triplet splitting in double quantum dots due to spin orbit and hyperfine interactions
• Hole Spin Coherence in a Ge/Si Heterostructure Nanowire
• Heavy hole states in Germanium hut wires
• Hole spin qubits in Si FinFETs with fully tunable spin-orbit coupling and sweet spots for charge noise
• Spin-based quantum computation in multielectron quantum dots
• Coherent spin control of s-, p-, d- and f-electrons in a silicon quantum dot
• Controlling a Nanowire Spin-Orbit Qubit via Electric-Dipole Spin Resonance
• On the nature of tunable hole g-factors in quantum dots
• Tunable g factor and phonon-mediated hole spin relaxation in Ge/Si nanowire quantum dots
• Self-controlled growth of highly uniform Ge/Si hut wires for scalable qubit devices
• Coherence and Screening in Multi-Electron Spin Qubits
• Single-shot readout of hole spins in Ge
• Screening of charged impurities with multi-electron singlet-triplet spin qubits in quantum dots
• Magnetic Field Evolution of Spin Blockade in Ge/Si Nanowire Double Quantum Dots
• Stationary and transient leakage current in the Pauli spin blockade
• Anisotropic Pauli spin blockade in hole quantum dots
• Hole spin resonance and spin-orbit coupling in a silicon metal-oxide-semiconductor field-effect transistor
• First-principles hyperfine tensors for electrons and holes in GaAs and silicon
• Leakage-current lineshapes from inelastic cotunneling in the Pauli spin blockade regime
• Anisotropic g-Factor and Spin-Orbit Field in a Ge Hut Wire Double Quantum Dot
• Quantum interferometry with a g-factor-tunable spin qubit
• Spin-echo dynamics of a heavy hole in a quantum dot
• Hole spin in tunable Ge hut wire double quantum dot
• Maximizing the purity of a qubit evolving in an anisotropic environment

Cited by in corpus (13)

• Recent advances in hole-spin qubits
• Electrical operation of planar Ge hole spin qubits in an in-plane magnetic field
• Enhanced orbital magnetic field effects in Ge hole nanowires
• Electrical operation of hole spin qubits in planar MOS silicon quantum dots
• Microscopic analysis of proximity-induced superconductivity and metallization effects in superconductor-germanium hole nanowires
• Coupling of hole double quantum dot in planar germanium to a microwave cavity
• Single-step high-fidelity three-qubit gates by anisotropic chiral interactions
• Dephasing of planar Ge hole spin qubits due to 1/$\text{f}$ charge noise
• Nonmonotonic buildup of spin-singlet correlations in a double quantum dot
• Scalable and Tunable In-Plane Ge/Si(001) Nanowires Grown by Molecular Beam Epitaxy
• Pauli spin blockade at room temperature in double-quantum-dot tunneling through individual deep dopants in silicon
• Supercurrent and multiple Andreev reflections in Ge hut nanowire Josephson Junctions
• Anomalous zero-field splitting for hole spin qubits in Si and Ge quantum dots