Hole spin resonance and spin-orbit coupling in a silicon metal-oxide-semiconductor field-effect transistor

Abstract

We study hole spin resonance in a p-channel silicon metal-oxide-semiconductor field-effect transistor. In the sub-threshold region, the measured source-drain current reveals a double dot in the channel. The observed spin resonance spectra agree with a model of strongly coupled two-spin states in the presence of a spin-orbit-induced anti-crossing. Detailed spectroscopy at the anti-crossing shows a suppressed spin resonance signal due to spin-orbit-induced quantum state mixing. This suppression is also observed for multi-photon spin resonances. Our experimental observations agree with theoretical calculations.

arXiv comment5 pages and 3 figures for the main text, 6 pages and 5 figures for the appendices

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