Pseudosymmetric bias and correct estimation of Coulomb/confinement energy for unintentional quantum dot in channel of metal-oxide-semiconductor field-effect transistor

Abstract

We describe a measurement method that enables the correct estimation of the charging energy of an unintentional quantum dot (QD) in the channel of a metal-oxide-semiconductor field-effect transistor (MOSFET). If the channel has a dominant QD with a large charging energy and an array of stray QDs with much weaker charging, this method eliminates the additional voltage drops due to stray QDs by regarding the stray QDs as series resistors. We apply this method to a short-channel MOSFET and find that the charging energy of the dominant QD can indeed be smaller than the size of the Coulomb diamond.

5 pages, 5 figures, longer version including temperature dependence

References in corpus (3)

• Transport spectroscopy of a single dopant in a gated silicon nanowire
• Single donor ionization energies in a nanoscale CMOS channel
• Pseudosymmetric bias and correct estimation of Coulomb/confinement energy for unintentional quantum dot in channel of metal-oxide-semiconductor field-effect transistor

Cited by in corpus (7)

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• Pseudosymmetric bias and correct estimation of Coulomb/confinement energy for unintentional quantum dot in channel of metal-oxide-semiconductor field-effect transistor
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• Formation of quantum dots in GaN/AlGaN FETs
• Dynamical topological quantum computation using spin pulse control in the Heisenberg model
• Indexing current-voltage characteristics using a hash function
• Probing electron trapping by current collapse in GaN/AlGaN FETs utilizing quantum transport characteristics