Measurement of the Spin Relaxation Time of Single Electrons in a Silicon MOS-Based Quantum Dot

Abstract

We report on measurements of the spin relaxation time T1 of individual electron spins in the few electron regime of a Si/SiO2-based quantum dot (QD). Energy-spectroscopy of the QD has been performed using a charge sensing technique. The spin relaxation times are subsequently measured in the time-domain by a pump-and-probe method. For the QD that contains an unpaired spin, likely only a single electron, we find that T1 depends strongly on the applied magnetic field. Possible mechanisms leading to the observed spin relaxation are discussed.

11 pages, 4 figures

References in corpus (6)

• Single-shot read-out of an individual electron spin in a quantum dot
• Spin relaxation and anticrossing in quantum dots: Rashba versus Dresselhaus spin-orbit coupling
• Experimental signature of phonon-mediated spin relaxation
• Excited-state spectroscopy on a nearly-closed quantum dot via charge detection
• Enhancement mode double top gated MOS nanostructures with tunable lateral geometry
• Lifetime measurements (T1) of electron spins in Si/SiGe quantum dots

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