Ambipolar quantum dots in intrinsic silicon

Abstract

We electrically measure intrinsic silicon quantum dots with electrostatically defined tunnel barriers. The presence of both p-type and n-type ohmic contacts enables the accumulation of either electrons or holes. Thus we are able to study both transport regimes within the same device. We investigate the effect of the tunnel barriers and the electrostatically defined quantum dots. There is greater localisation of charge states under the tunnel barriers in the case of hole conduction leading to higher charge noise in the p-regime.

arXiv commentin press at Appl. Phys. Lett

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• Palladium gates for reproducible quantum dots in silicon
• Passivation and characterization of charge defects in ambipolar silicon quantum dots
• A fabrication guide for planar silicon quantum dot heterostructures
• Scalable on-chip multiplexing of silicon single and double quantum dots
• Dispersive readout of reconfigurable ambipolar quantum dots in a silicon-on-insulator nanowire
• Single-charge occupation in ambipolar quantum dots
• Combining n-MOS Charge Sensing with p-MOS Silicon Hole Double Quantum Dots in a CMOS platform
• An ambipolar single-charge pump in silicon