A tunable, dual mode field-effect or single electron transistor
arXiv:1201.3760 · doi:10.1063/1.3678042
Abstract
A dual mode device behaving either as a field-effect transistor or a single electron transistor (SET) has been fabricated using silicon-on-insulator metal oxide semiconductor technology. Depending on the back gate polarisation, an electron island is accumulated under the front gate of the device (SET regime), or a field-effect transistor is obtained by pinching off a bottom channel with a negative front gate voltage. The gradual transition between these two cases is observed. This dual function uses both vertical and horizontal tunable potential gradients in non-overlapped silicon-on-insulator channel.
References in corpus (2)
Cited by in corpus (17)
- Cryogenic Subthreshold Swing Saturation in FD-SOI MOSFETs described with Band Broadening
- Dispersively detected Pauli Spin-Blockade in a Silicon Nanowire Field-Effect Transistor
- Detection of a large valley-orbit splitting in silicon with two-donor spectroscopy
- Few Electron Limit of n-type Metal Oxide Semiconductor Single Electron Transistors
- Charge Pumping Through a Single Donor Atom
- Charge dynamics and spin blockade in a hybrid double quantum dot in silicon
- A hybrid metal/semiconductor electron pump for quantum metrology
- Ambipolar quantum dots in undoped silicon fin field-effect transistors
- Ambipolar quantum dots in intrinsic silicon
- Radio-frequency dispersive detection of donor atoms in a field-effect transistor
- Reconfigurable quadruple quantum dots in a silicon nanowire transistor
- Pauli spin blockade in CMOS double quantum dot devices
- Thermionic charge transport in CMOS nano-transistors
- Control of the ionization state of 3 single donor atoms in silicon
- A Silicon Nanocrystal Tunnel Field Effect Transistor
- Dopant-controlled single-electron pumping through a metallic island
- Reproducibility and variability in commercial SiC MOSFETs at deep-cryogenic temperatures