A hybrid metal/semiconductor electron pump for quantum metrology

Abstract

Electron pumps capable of delivering a current higher than 100pA with sufficient accuracy are likely to become the direct mise en pratique of the possible new quantum definition of the ampere. Furthermore, they are essential for closing the quantum metrological triangle experiment which tests for possible corrections to the quantum relations linking e and h, the electron charge and the Planck constant, to voltage, resistance and current. We present here single-island hybrid metal/semiconductor transistor pumps which combine the simplicity and efficiency of Coulomb blockade in metals with the unsurpassed performances of silicon switches. Robust and simple pumping at 650MHz and 0.5K is demonstrated. The pumped current obtained over a voltage bias range of 1.4mV corresponds to a relative deviation of 5e-4 from the calculated value, well within the 1.5e-3 uncertainty of the measurement setup. Multi-charge pumping can be performed. The simple design fully integrated in an industrial CMOS process makes it an ideal candidate for national measurement institutes to realize and share a future quantum ampere.

References in corpus (4)

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Cited by in corpus (16)

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• Practical quantum realization of the ampere from the electron charge
• Thermodynamic Bounds on Coherent Transport in Periodically Driven Conductors
• Gauge freedom in observables and Landsbergs nonadiabatic geometric phase: pumping spectroscopy of interacting open quantum systems
• Electron waiting times of a periodically driven single-electron turnstile
• Spin-selective electron transfer in quantum dot array
• Classical-to-quantum crossover in electron on-demand emission
• Optimization of quantized charge pumping using full counting statistics
• Quantum Properties of the radiation emitted by a conductor in the Coulomb Blockade Regime
• Lissajous rocking ratchet
• Dopant-controlled single-electron pumping through a metallic island
• Design and operation of CMOS-compatible electron pumps fabricated with optical lithography
• Controlling the error mechanism in a tunable-barrier non-adiabatic charge pump by dynamic gate compensation