Thermal-error regime in high-accuracy gigahertz single-electron pumping

Abstract

Single-electron pumps based on semiconductor quantum dots are promising candidates for the emerging quantum standard of electrical current. They can transfer discrete charges with part-per-million (ppm) precision in nanosecond time scales. Here, we employ a metal-oxide-semiconductor silicon quantum dot to experimentally demonstrate high-accuracy gigahertz single-electron pumping in the regime where the number of electrons trapped in the dot is determined by the thermal distribution in the reservoir leads. In a measurement with traceability to primary voltage and resistance standards, the averaged pump current over the quantized plateau, driven by a \mbox{$1$-GHz} sinusoidal wave in the absence of magnetic field, is equal to the ideal value of $ef$ within a measurement uncertainty as low as $0.27$~ppm.

References in corpus (10)

• Experimental determination of the Berry phase in a superconducting charge pump
• Partitioning of on-demand electron pairs
• Validation of a quantized-current source with 0.2 ppm uncertainty
• Counting statistics for electron capture in a dynamic quantum dot
• Time-of-Flight Measurements of Single-Electron Wave Packets in Quantum-Hall Edge States
• An accurate single-electron pump based on a highly tunable silicon quantum dot
• Nanoampere pumping of Cooper pairs
• Validation of the ultrastable low-noise current amplifier as travelling standard for small direct currents
• Robust operation of a GaAs tunable barrier electron pump
• High-resolution error detection in the capture process of a single-electron pump

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• Optimization of quantized charge pumping using full counting statistics
• Gigahertz Single-Electron Pumping Mediated by Parasitic States
• Inter-laboratory nanoamp current comparison with sub-part-per-million uncertainty
• A primary quantum current standard based on the Josephson and the quantum Hall effects
• Non-adiabatic single-electron pump in a dopant-free GaAs/AlGaAs 2DEG
• Exploring a new ammeter traceability route for ionisation chamber measurements
• Re-evaluation of uncertainty for calibration of $100$ M$\Omega$ and $1$ G$\Omega$ resistors at NPL
• A unified realization of electrical quantities from the quantum International System of Units
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• Fast characterization of multiplexed single-electron pumps with machine learning
• Advances toward high-accuracy gigahertz operation of tunable-barrier single-hole pumps in silicon
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• Coulomb collisions of hot and cold single electrons in series-coupled silicon single-electron pumps
• Silicon charge pump operation limit above and below liquid helium temperature
• Scalable Parallel Single-Electron Pumps in Silicon with Split-Source Control in the Nanoampere Regime
• Quantized Acoustoelectric Floquet Effect in Quantum Nanowires