216 citations · 701 across the 17 of their papers we have counts for
16 papers
InAs-Al Hybrid Devices Passing the Topological Gap Protocol
Morteza Aghaee, Arun Akkala, Zulfi Alam +124
We present measurements and simulations of semiconductor-superconductor heterostructure devices that are consistent with the observation of topological superconductivity and Majora…
Gate-based spin readout of hole quantum dots with site-dependent factors
Angus Russell, Alexander Zotov, Ruichen Zhao +3
The rapid progress of hole spin qubits in group IV semiconductors has been driven by their potential for scalability. This is owed to the compatibility with industrial manufacturin…
Towards merged-element transmons using silicon fins: the FinMET
Aranya Goswami, Anthony P. McFadden, Tongyu Zhao +7
A merged-element transmon (MET) device, based on silicon (Si) fins, is proposed and the first steps to form such a "FinMET" are demonstrated. This new application of fin technology…
A universal quantum gate set for transmon qubits with strong ZZ interactions
Junling Long, Tongyu Zhao, Mustafa Bal +13
High-fidelity single- and two-qubit gates are essential building blocks for a fault-tolerant quantum computer. While there has been much progress in suppressing single-qubit gate e…
Cryogenic microwave loss in epitaxial Al/GaAs/Al trilayers for superconducting circuits
C. R. H. McRae, A. McFadden, R. Zhao +7
Epitaxially-grown superconductor/dielectric/superconductor trilayers have the potential to form high-performance superconducting quantum devices and may even allow scalable superco…
Merged-element transmon
R. Zhao, S. Park, T. Zhao +4
Transmon qubits are ubiquitous in the pursuit of quantum computing using superconducting circuits. However, they have some drawbacks that still need to be addressed. Most important…
Epitaxial Al/GaAs/Al tri-layers fabricated using a novel wafer-bonding technique
Anthony McFadden, Aranya Goswami, Michael Seas +4
Epitaxial Al/GaAs/Al structures having controlled thickness of high-quality GaAs and pristine interfaces have been fabricated using a wafer-bonding technique. III-V semiconductor/A…
Overlap junctions for superconducting quantum electronics and amplifiers
Mustafa Bal, Junling Long, Ruichen Zhao +10
Due to their unique properties as lossless, nonlinear circuit elements, Josephson junctions lie at the heart of superconducting quantum information processing. Previously, we demon…
Pauli Blockade in Silicon Quantum Dots with Spin-Orbit Control
Amanda Seedhouse, Tuomo Tanttu, Ross C. C. Leon +12
Quantum computation relies on accurate measurements of qubits not only for reading the output of the calculation, but also to perform error correction. Most proposed scalable silic…
Superconducting charge sensor coupled to an electron layer in silicon
Máté Jenei, Ruichen Zhao, Kuan Y. Tan +8
Schemes aimed at transferring individual electrons in semiconductor devices and detecting possible transfer errors have increasing importance for metrological applications. We stud…
Waiting time distributions in a two-level fluctuator coupled to a superconducting charge detector
Máté Jenei, Elina Potanina, Ruichen Zhao +7
We analyze charge fluctuations in a parasitic state strongly coupled to a superconducting Josephson-junction-based charge detector. The charge dynamics of the state resembles that…
Single-spin qubits in isotopically enriched silicon at low magnetic field
R. Zhao, T. Tanttu, K. Y. Tan +13
Single-electron spin qubits employ magnetic fields on the order of 1 Tesla or above to enable quantum state readout via spin-dependent-tunnelling. This requires demanding microwave…
Thermal-error regime in high-accuracy gigahertz single-electron pumping
R. Zhao, A. Rossi, S. P. Giblin +5
Single-electron pumps based on semiconductor quantum dots are promising candidates for the emerging quantum standard of electrical current. They can transfer discrete charges with…
Dispersive readout of a silicon quantum dot with an accumulation-mode gate sensor
A. Rossi, R. Zhao, A. S. Dzurak +1
Sensitive charge detection has enabled qubit readout in solid-state systems. Recently, an alternative to the well-established charge detection via on-chip electrometers has emerged…
A planar Al-Si Schottky Barrier MOSFET operated at cryogenic temperatures
Wendy E. Purches, Alessandro Rossi, Ruichen Zhao +5
Schottky Barrier (SB)-MOSFET technology offers intriguing possibilities for cryogenic nano-scale devices, such as Si quantum devices and superconducting devices. We present experim…
An accurate single-electron pump based on a highly tunable silicon quantum dot
A. Rossi, T. Tanttu, K. Y. Tan +7
Nanoscale single-electron pumps can be used to generate accurate currents, and can potentially serve to realize a new standard of electrical current based on elementary charge. Her…