Single-spin qubits in isotopically enriched silicon at low magnetic field

Abstract

Single-electron spin qubits employ magnetic fields on the order of 1 Tesla or above to enable quantum state readout via spin-dependent-tunnelling. This requires demanding microwave engineering for coherent spin resonance control and significant on-chip real estate for electron reservoirs, both of which limit the prospects for large scale multi-qubit systems. Alternatively, singlet-triplet (ST) readout enables high-fidelity spin-state measurements in much lower magnetic fields, without the need for reservoirs. Here, we demonstrate low-field operation of metal-oxide-silicon (MOS) quantum dot qubits by combining coherent single-spin control with high-fidelity, single-shot, Pauli-spin-blockade-based ST readout. We discover that the qubits decohere faster at low magnetic fields with $T_2^{Rabi}=18.6$~$\mu$s and $T_2^{\ast }=1.4$~$\mu$s at 150~mT. Their coherence is limited by spin flips of residual ${}^{29}$Si nuclei in the isotopically enriched ${}^{28}$Si host material, which occur more frequently at lower fields. Our finding indicates that new trade-offs will be required to ensure the frequency stabilization of spin qubits and highlights the importance of isotopic enrichment of device substrates for the realization of a scalable silicon-based quantum processor.

References in corpus (37)

• Single-shot read-out of an individual electron spin in a quantum dot
• An addressable quantum dot qubit with fault-tolerant control fidelity
• A >99.9%-fidelity quantum-dot spin qubit with coherence limited by charge noise
• A programmable two-qubit quantum processor in silicon
• Electron spin coherence exceeding seconds in high purity silicon
• Storing quantum information for 30 seconds in a nanoelectronic device
• Interfacing spin qubits in quantum dots and donors - hot, dense and coherent
• A CMOS silicon spin qubit
• Electrically driven single electron spin resonance in a slanting Zeeman field
• Quantum CNOT Gate for Spins in Silicon
• Electrical control of a long-lived spin qubit in a Si/SiGe quantum dot
• Silicon CMOS architecture for a spin-based quantum computer
• Fidelity benchmarks for two-qubit gates in silicon
• Singlet-triplet spin blockade and charge sensing in a few-electron double quantum dot
• A fault-tolerant addressable spin qubit in a natural silicon quantum dot
• Silicon qubit fidelities approaching incoherent noise limits via pulse engineering
• Rapid high-fidelity gate-based spin read-out in silicon
• Gate-based single-shot readout of spins in silicon
• Gate-reflectometry dispersive readout and coherent control of a spin qubit in silicon
• Benchmarking Gate Fidelities in a Si/SiGe Two-Qubit Device
• Coherent shuttle of electron-spin states
• Single-Spin CCD
• Measurement of Temporal Correlations of the Overhauser Field in a Double Quantum Dot
• Hyperfine interactions in silicon quantum dots
• Coherent transfer of quantum information in silicon using resonant SWAP gates
• Integrated silicon qubit platform with single-spin addressability, exchange control and robust single-shot singlet-triplet readout
• Intervalley coupling for interface-bound electrons in silicon: An effective mass study
• Nanoscale broadband transmission lines for spin qubit control
• Robust Single-Shot Spin Measurement with 99.5% Fidelity in a Quantum Dot Array
• A CMOS dynamic random access architecture for radio-frequency readout of quantum devices
• Quantum dephasing in a gated GaAs triple quantum dot due to nonergodic noise
• Coherent Control of a Single Silicon-29 Nuclear Spin Qubit
• Dynamically controlled charge sensing of a few-electron silicon quantum dot
• Exchange Control of Nuclear Spin Diffusion in a Double Quantum Dot
• Coherent transfer of electron spin correlations assisted by dephasing noise
• Optical Detection of a Single Nuclear Spin
• Palladium gates for reproducible quantum dots in silicon

Cited by in corpus (41)

• Semiconductor Spin Qubits
• Scaling silicon-based quantum computing using CMOS technology: State-of-the-art, Challenges and Perspectives
• Review of performance metrics of spin qubits in gated semiconducting nanostructures
• Low-frequency spin qubit detuning noise in highly purified ${}^{28}$Si/SiGe
• Coherent spin qubit transport in silicon
• High-fidelity operation and algorithmic initialisation of spin qubits above one kelvin
• Pauli Blockade in Silicon Quantum Dots with Spin-Orbit Control
• Fast gate-based readout of silicon quantum dots using Josephson parametric amplification
• Coherent spin control of s-, p-, d- and f-electrons in a silicon quantum dot
• Resonantly driven singlet-triplet spin qubit in silicon
• Recent advances in hole-spin qubits
• Spin readout of a CMOS quantum dot by gate reflectometry and spin-dependent tunnelling
• Silicon quantum dot devices with a self-aligned second gate layer
• Single-electron spin resonance in a nanoelectronic device using a global field
• A 300 mm foundry silicon spin qubit unit cell exceeding 99% fidelity in all operations
• Spatial noise correlations beyond nearest-neighbor in ${}^{28}$Si/SiGe spin qubits
• First-principles hyperfine tensors for electrons and holes in GaAs and silicon
• Implementation of the SMART protocol for global qubit control in silicon
• Hotter is easier: unexpected temperature dependence of spin qubit frequencies
• Magnetic Gradient Fluctuations from Quadrupolar ${}^{73}$Ge in Si/SiGe Exchange-Only Qubits
• Bounds to electron spin qubit variability for scalable CMOS architectures
• A Spin Quintet in a Silicon Double Quantum Dot: Spin Blockade and Relaxation
• Superconducting routing platform for large-scale integration of quantum technologies
• Jellybean quantum dots in silicon for qubit coupling and on-chip quantum chemistry
• Spin-Valley Qubit Dynamics In Exchange Coupled Silicon Quantum Dots
• A high-sensitivity charge sensor for silicon qubits above one kelvin
• Probabilistic teleportation of a quantum dot spin qubit
• Non-reciprocal Pauli Spin Blockade in a Silicon Double Quantum Dot
• Non-Markovian transient spectroscopy in cavity QED
• Long-range exchange interaction between spin qubits mediated by a superconducting link at finite magnetic field
• Correlations of spin splitting and orbital fluctuations due to 1/f charge noise in the Si/SiGe Quantum Dot
• Combining n-MOS Charge Sensing with p-MOS Silicon Hole Double Quantum Dots in a CMOS platform
• Impact of electrostatic crosstalk on spin qubits in dense CMOS quantum dot arrays
• Singlet-triplet-state readout in silicon-metal-oxide-semiconductor double quantum dots
• Robust entangling gate for capacitively coupled few-electron singlet-triplet qubits
• Coherence of a field-gradient-driven singlet-triplet qubit coupled to many-electron spin states in 28Si/SiGe
• Electrical readout of spins in the absence of spin blockade
• Interplay of Zeeman Splitting and Tunnel Coupling in Coherent Spin Qubit Shuttling
• Quantum Error Correction Assisted Axion Search in CMOS Spin Qubit Arrays
• High-fidelity spin readout via the double latching mechanism
• Coupling a ${}^{73}$Ge nuclear spin to an electrostatically defined quantum dot