Jellybean quantum dots in silicon for qubit coupling and on-chip quantum chemistry
arXiv:2208.04724 · doi:10.1002/adma.202208557
Abstract
The small size and excellent integrability of silicon metal-oxide-semiconductor (SiMOS) quantum dot spin qubits make them an attractive system for mass-manufacturable, scaled-up quantum processors. Furthermore, classical control electronics can be integrated on-chip, in-between the qubits, if an architecture with sparse arrays of qubits is chosen. In such an architecture qubits are either transported across the chip via shuttling, or coupled via mediating quantum systems over short-to-intermediate distances. This paper investigates the charge and spin characteristics of an elongated quantum dot -- a so-called jellybean quantum dot -- for the prospects of acting as a qubit-qubit coupler. Charge transport, charge sensing and magneto-spectroscopy measurements are performed on a SiMOS quantum dot device at mK temperature, and compared to Hartree-Fock multi-electron simulations. At low electron occupancies where disorder effects and strong electron-electron interaction dominate over the electrostatic confinement potential, the data reveals the formation of three coupled dots, akin to a tunable, artificial molecule. One dot is formed centrally under the gate and two are formed at the edges. At high electron occupancies, these dots merge into one large dot with well-defined spin states, verifying that jellybean dots have the potential to be used as qubit couplers in future quantum computing architectures.
References in corpus (18)
- Integrated Photonic Quantum Technologies
- An addressable quantum dot qubit with fault-tolerant control fidelity
- Computing with spin qubits at the surface code error threshold
- Fast universal quantum control above the fault-tolerance threshold in silicon
- Semiconductor Qubits In Practice
- Scaling silicon-based quantum computing using CMOS technology: State-of-the-art, Challenges and Perspectives
- Precision tomography of a three-qubit donor quantum processor in silicon
- Roadmap for gallium arsenide spin qubits
- Roadmap on quantum nanotechnologies
- Coherent spin qubit transport in silicon
- Site-selective quantum control in an isotopically enriched 28Si/SiGe quadruple quantum dot
- Strong electron-electron interactions in Si/SiGe quantum dots
- Coherent control and spectroscopy of a semiconductor quantum dot Wigner molecule
- Simultaneous Operations in a Two-Dimensional Array of Singlet-Triplet Qubits
- Two-body Wigner molecularization in asymmetric quantum dot spin qubits
- Molecular formations and spectra due to electron correlations in three-electron hybrid double-well qubits
- Wigner molecules and hybrid qubits
- High-precision real-space simulation of electrostatically-confined few-electron states
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- Tomography of entangling two-qubit logic operations in exchange-coupled donor electron spin qubits
- Scalable entanglement of nuclear spins mediated by electron exchange
- Quantum Kernel Learning for Small Dataset Modeling in Semiconductor Fabrication: Application to Ohmic Contact
- An elongated quantum dot as a distributed charge sensor
- Electronic Wigner-Molecule Polymeric Chains in Elongated Silicon Quantum Dots and Finite-Length Quantum Wires
- Resonator-mediated quantum gate between distant charge qubits
- Interplay of Zeeman Splitting and Tunnel Coupling in Coherent Spin Qubit Shuttling
- True decoherence-free-subspace derived from a semiconductor double quantum dot Heisenberg spin-trimer
- Electronic Correlations in Multielectron Silicon Quantum Dots