Dispersive readout of a silicon quantum dot with an accumulation-mode gate sensor

Abstract

Sensitive charge detection has enabled qubit readout in solid-state systems. Recently, an alternative to the well-established charge detection via on-chip electrometers has emerged, based on in situ gate detectors and radio-frequency dispersive readout techniques. This approach promises to facilitate scalability by removing the need for additional device components devoted to sensing. Here, we perform gate-based dispersive readout of an accumulation-mode silicon quantum dot. We observe that the response of an accumulation-mode gate detector is significantly affected by its bias voltage, particularly if this exceeds the threshold for electron accumulation. We discuss and explain these results in light of the competing capacitive contributions to the dispersive response.

5 pages, 4 figures

References in corpus (7)

• Driven coherent oscillations of a single electron spin in a quantum dot
• On-chip Maxwell's demon as an information-powered refrigerator
• A high-sensitivity gate-based charge sensor in silicon
• Ultra-long distance interaction between spin qubits
• Tunable Noise Cross-Correlations in a Double Quantum Dot
• Quantum and Tunnelling Capacitance in Charge and Spin Qubits
• Gate-sensing coherent charge oscillations in a silicon field-effect transistor

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• Single-shot readout of a driven hybrid qubit in a GaAs double quantum dot
• Hybrid superconductor-semiconductor systems for quantum technology
• Induced quantum dot probe for material characterization
• Dispersive sensing in hybrid InAs/Al nanowires
• Democratizing Spin Qubits
• Gate-based spin readout of hole quantum dots with site-dependent $g-$factors
• Dispersive readout of a silicon quantum device using an atomic force microscope-based rf gate sensor
• Dispersive Gate Sensing the Quantum Capacitance of a Point Contact